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IRFH5306PbF
HEXFET ? Power MOSFET
V DS
R DS(on) max
(@V GS = 10V)
Q g (typical)
R G (typical)
30
8.1
7.8
1.4
V
m ?
nC
?
I D
(@T c(Bottom) = 25°C)
44
A
PQFN 5X6 mm
Applications
? Control MOSFET for buck converters
Features and Benefits
Features
Low charge (typical 7.8nC)
Low thermal resistance to PCB ( < 4.9°C/W)
100% Rg tested
Benefits
Lower switching losses
Increased power density
Increased reliability
Low profile ( < 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
results in
?
Increased power density
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRFH5306TRPBF
PQFN 5mm x 6mm
Tape and Reel 4000
IRFH5306TR2PBF
PQFN 5mm x 6mm
Tape and Reel
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C(Bottom) = 25°C
I D @ T C(Bottom) = 100°C
I DM
P D @T A = 25°C
P D @ T C(Bottom) = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
±20
15
13
44
28
60
3.6
26
0.029
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 8
1
www.irf.com ? 2014 International Rectifier
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January 20, 2014
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